TOSHIBA UNVEILS NEW DISCRETE INSULATED GATE BIPOLAR TRANSISTOR

KUALA LUMPUR, March 9 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched a 650V discrete insulated gate bipolar transistor (IGBT) “GT30J65MRB” for the power factor correction (PFC) circuits of air conditioners and large power supplies for industrial equipment.

In industrial equipment and home appliances, which consume considerable electricity, demand for highly efficient switching devices is growing due to the increasing use of inverters in air conditioners and the need to lower power consumption in large-scale power supplies for industrial equipment.

This has spurred increasing demand for low-loss switching devices and higher switching frequencies in PFC circuits, according to Toshiba in a statement.

Toshiba brings the latest process to its new IGBT which also has a built-in diode with forward voltage of 1.20V, approximately 43 per cent lower than in GT50JR22. These improvements contribute to increased equipment efficiency.

For PFC circuits of air conditioners, Toshiba’s previous product GT50JR22 is used with an operating frequency below 40kHz. GT30J65MRB is Toshiba’s first IGBT for PFC for use below 60kHz, achieved by reducing switching loss (turn-off switching loss) to secure higher frequency operation.

As a leading supplier of advanced semiconductor and storage solutions, Toshiba will continue to expand its product line-up to meet market trends and improve equipment efficiency.

-- BERNAMA