TOKYO, Jan 29 (Bernama-BUSINESS WIRE) -- Toshiba Electronic Devices & Storage Corporation today announced the launch of “SSM6N357R,” a new MOSFET with a built-in diode between the drain and gate terminals. The device is suited to driving inductive loads, such as mechanical relays. Volume shipments start today.
SSM6N357R integrates a pull-down resistor, a series resistor and a Zener diode, which reduces the parts count and save on board space. Furthermore, since it is a dual-type package product (2 in 1), it has an approximately 42% smaller mounting area than the alternative of using two SSM3K357R (2.4 x 2.9 x 0.8 mm) single-type package products.
An industry-standard TSOP6F-class package, a low operating voltage of 3.0V and AEC-Q101 qualification make the SSM6N357R suitable for automotive and many other applications.
http://mrem.bernama.com/viewsm.php?idm=31050
SSM6N357R integrates a pull-down resistor, a series resistor and a Zener diode, which reduces the parts count and save on board space. Furthermore, since it is a dual-type package product (2 in 1), it has an approximately 42% smaller mounting area than the alternative of using two SSM3K357R (2.4 x 2.9 x 0.8 mm) single-type package products.
An industry-standard TSOP6F-class package, a low operating voltage of 3.0V and AEC-Q101 qualification make the SSM6N357R suitable for automotive and many other applications.
http://mrem.bernama.com/viewsm.php?idm=31050
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